FDMC7678 전자부품 데이터시트

FDMC7680 N-Channel Power Trench® MOSFET July 2009 FDMC7680 30 V, 14.8 A, 7.2 m: Features „ Max rDS(on) = 7.2 m: at VGS = 10 V, ID = 14.8 A „ Max rDS(on) = 9.5 m: at VGS = 4.5 V, ID = 12.4 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant

FDMC7672S N-Channel Power Trench® SyncFETTM FDMC7672S N-Channel Power Trench® SyncFETTM 30 V, 14.8 A, 6.0 m: Features General Description September 2010 „ Max rDS(on) = 6.0 m: at VGS = 10 V, ID = 14.8 A „ Max rDS(on) = 7.1 m: at VGS = 4.5 V, ID = 12.4 A „ High performance technology for

FDMC7664 N-Channel PowerTrench® MOSFET July 2009 FDMC7664 30 V, 18.8 A, 4.2 m: Features N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-stat

FDMC7660S N-Channel Power Trench® SyncFET™ January 2014 FDMC7660S N-Channel Power Trench® SyncFET™ 30 V, 20 A, 2.2 mΩ Features „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technology for extremely low rDS(on)

FDMC7660 N-Channel PowerTrench® MOSFET June 2012 FDMC7660 N-Channel PowerTrench® MOSFET 30 V, 20 A, 2.2 mΩ Features General Description „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technology for extremely low rDS(on

FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET July 2015 FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30 V, 40 A, 2.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 22 A „ Max rDS(on) = 3.3 mΩ at