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Datasheet FDMA905 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FDMA905 | P-Channel Enhancement Mode Power MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
FDMA905
NCE P-Channel Enhancement Mode Power MOSFET
Description
The FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching applica | Tuofeng Semiconductor | mosfet |
2 | FDMA905P | Single P-Channel PowerTrench MOSFET FDMA905P Single P-Channel PowerTrench® MOSFET
June 2014
FDMA905P
Single P-Channel PowerTrench® MOSFET
-12 V, -10 A, 16 mΩ Features General Description
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features | Fairchild Semiconductor | mosfet |
FDM Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FDM-2B | FDM-2B w
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ETC data | | |
2 | FDM100-0045SP | Buck Chopper FDM 100-0045SP
Buck Chopper with Trench Power MOSFET and Schottky Diode
in ISOPLUS i4-PACTM
Preliminary data
3 5 4
ID25 = 100 A = 55 V VDSS RDSon typ. = 5.7 mΩ
1
2
5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ±20 100 80 V V A A
IXYS Corporation data | | |
3 | FDM21-05QC | Q-Class Power MOSFETs
FMD 21-05QC FDM 21-05QC
Q-Class Power MOSFETs
Chopper Topologies in ISOPLUS i4-PACTM
FMD
3 3 5 4 1 2 2 4
ID25 = 21 A = 500 V VDSS RDSon typ. = 190 mΩ
FDM
Preliminary data
1 5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum R IXYS Corporation mosfet | | |
4 | FDM2452NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM2452NZ
July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame w Fairchild Semiconductor mosfet | | |
5 | FDM3300NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM3300NZ
February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead f Fairchild Semiconductor mosfet | | |
6 | FDM3622 | N-Channel PowerTrench MOSFET FDM3622 N-Channel PowerTrench® MOSFET
January 2005
FDM3622 N-Channel PowerTrench® MOSFET
100V, 4.4A, 60mΩ Features
r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Singl Fairchild Semiconductor mosfet | | |
7 | FDM606P | P-Channel 1.8V Logic Level Power Trench MOSFET FDM606P
July 2002
FDM606P
P-Channel 1.8V Logic Level Power Trench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Fairchild Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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