FDI3632
Fairchild Semiconductor
N-Channel PowerTrench MOSFET 100V/ 80A/ 9mFDB3632 / FDP3632 / FDI3632
April 2003
FDB3632 / FDP3632 / FDI3632
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Features
• r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode
FDI3652
N-Channel PowerTrench MOSFET 100V/ 61A/ 16mFDB3652 / FDP3652 / FDI3652
October 2002
FDB3652 / FDP3652 / FDI3652
N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ
Features
• r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A • Qg(tot) = 41nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Re
Fairchild Semiconductor
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