FDG6323L 전자부품 데이터시트

November 1998 FDG6320C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize

November 1998 FDG6321C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize

June 1999 FDG6324L Integrated Load Switch General Description This device is intended to be configured as a load switch and is particularly suited for compact computer peripheral switching applications where 3V to 20V input and 0.6A output current capability are needed. This device features a small

March 1999 FDG6323L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.6A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which

November 1998 FDG6321C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize

February 1998 FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize