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Datasheet FDG6303 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FDG6303 | Dual N-Channel/ Digital FET July 1999
FDG6303N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state re |
 Fairchild Semiconductor |
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| 1 | FDG6303N | Dual N-Channel/ Digital FET July 1999
FDG6303N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state re |
Fairchild Semiconductor |
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