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FDFS2P103 September 2001 FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. T
FDFS2P106A June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
FDFS2P102 October 2000 FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed
FDFS2P102 October 2000 FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed
FDFS2P102A August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. T
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