FDFMA2P857
Fairchild Semiconductor
Integrated P-Channel PowerTrench MOSFET and Schottky DiodeFDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
February 2007
FDFMA2P857
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
–20V, –3.0A, 120mΩ Features
MOSFET:
Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A
FDFMA2P859T
Integrated P-Channel PowerTrench MOSFET and Schottky DiodeFDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
FDFMA2P859T
–20 V, –3.0 A, 120 m: Features
MOSFET:
Max rDS(on) = 120 m: at VGS = –4.5 V, ID = –3.0 A Max rDS(on) = 160 m: at VGS = –2.5 V, ID = –2.5 A Max rDS(on) = 240 m: at VGS = –1.8 V, ID = –1.0 A
Fairchild Semiconductor
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FDFMA2P853T
Integrated P-Channel PowerTrench MOSFETFDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
December 2008
FDFMA2P853T
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
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–20 V, –3.0 A, 120 mΩ Features
MOSFET:
Max rDS(on) = 120 mΩ at VGS = –4.5 V, ID = –3.0 A Max rD
Fairchild Semiconductor
PDF
FDFMA2P853
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
August 2005
FDFMA2P853
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package solution for the battery charge switch in ce
Fairchild Semiconductor
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