FDFMA2P853
Fairchild Semiconductor
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
August 2005
FDFMA2P853
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package solu
FDFMA2P853T
Fairchild Semiconductor
Integrated P-Channel PowerTrench MOSFETFDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
December 2008
FDFMA2P853T
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
tm
–20 V, –3.0 A, 120 mΩ Features
MOSFET:
Max rDS(on) = 120 mΩ at