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Datasheet FDD86102 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | FDD86102 | MOSFET ( Transistor ) FDD86102 N-Channel PowerTrench® MOSFET
FDD86102
N-Channel PowerTrench® MOSFET
100 V, 36 A, 24 mΩ
Features
General Description
March 2012
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A
Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A
High performance trench technology for extremely low rD |
 Fairchild Semiconductor |
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| 1 | FDD86102LZ | MOSFET ( Transistor ) FDD86102LZ N-Channel PowerTrench® MOSFET
FDD86102LZ
N-Channel PowerTrench® MOSFET
100 V, 35 A, 22.5 mΩ
Features
General Description
August 2012
Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Not |
Fairchild Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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