FDC8878
Fairchild Semiconductor
N-Channel PowerTrench MOSFETFDC8878 N-Channel PowerTrench® MOSFET
FDC8878
N-Channel PowerTrench® MOSFET
30 V, 8.0 A, 16 mΩ Features General Description
January 2012
Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A High performa
FDC8884
N-Channel Power Trench MOSFETFDC8884 N-Channel Power Trench® MOSFET
January 2012
FDC8884
N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
Features
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast swi
Fairchild Semiconductor
PDF
FDC8886
N-Channel Power Trench MOSFETFDC8886 N-Channel Power Trench® MOSFET
January 2012
FDC8886
N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
Features
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast swi
Fairchild Semiconductor
PDF