FDC8602
Fairchild Semiconductor
Dual N-Channel Shielded Gate PowerTrench MOSFETFDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
FDC8602
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 1.2 A, 350 mΩ Features General Description
This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s
FDC86244
N-Channel Power Trench MOSFETFDC86244 N-Channel Power Trench® MOSFET
November 2010
FDC86244
N-Channel Power Trench® MOSFET
150 V, 2.3 A, 144 mΩ
Features
Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A High performance trench technology for extremely low rDS(on) Hig
Fairchild Semiconductor
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FDC8601
N-Channel Shielded Gate PowerTrench MOSFETFDC8601 N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
FDC8601
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 109 mΩ
Features
Shielded Gate MOSFET Technology Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A High performa
Fairchild Semiconductor
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