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FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench™ MOSFET General Description These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low
FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench™ MOSFET General Description These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low
April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO
March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored
November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state
April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO
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