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FDC658P 전자부품 데이터시트



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FDC658P  

Fairchild Semiconductor
Fairchild Semiconductor

FDC658P

Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET

February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state




관련 부품 FDC65 상세설명

FDC6506P  

  
Dual P-Channel Logic Level PowerTrench MOSFET

FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench™ MOSFET General Description These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDC6506  

  
Dual P-Channel Logic Level PowerTrench MOSFET

FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench™ MOSFET General Description These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDC6561  

  
Dual N-Channel Logic Level PowerTrenchTM MOSFET

April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDC654P  

  
P-Channel Enhancement Mode Field Effect Transistor

March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDC653N  

  
N-Channel Enhancement Mode Field Effect Transistor

November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDC6561AN  

  
Dual N-Channel Logic Level PowerTrenchTM MOSFET

April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO



Fairchild Semiconductor
Fairchild Semiconductor

PDF




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