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Datasheet FDC638 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | FDC638 | P-Channel 2.5V Specified PowerTrenchTM MOSFET June 1999
FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge f |
 Fairchild Semiconductor |
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| 2 | FDC638APZ | N-Channel MOSFET FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET
December 2006
FDC638APZ
P-Channel 2.5V PowerTrench® Specified MOSFET
–20V, –4.5A, 43mΩ Features
Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A Low gate charge (8nC typi |
Fairchild Semiconductor |
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| 1 | FDC638P | P-Channel 2.5V Specified PowerTrenchTM MOSFET June 1999
FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge f |
Fairchild Semiconductor |
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