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FDC636P 전자부품 데이터시트



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FDC636P  

Fairchild Semiconductor
Fairchild Semiconductor

FDC636P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

May 1998 FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Thi




관련 부품 FDC63 상세설명

FDC6325L  

  
Integrated Load Switch

August 1998 FDC6325L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 1.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) whic



Fairchild Semiconductor
Fairchild Semiconductor

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FDC6318P  

  
Dual P-Channel 1.8V PowerTrench Specified MOSFET

FDC6318P December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintai



Fairchild Semiconductor
Fairchild Semiconductor

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FDC6318  

  
Dual P-Channel 1.8V PowerTrench Specified MOSFET

FDC6318P December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintai



Fairchild Semiconductor
Fairchild Semiconductor

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FDC6392S  

  
20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode

FDC6392S April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. Th



Fairchild Semiconductor
Fairchild Semiconductor

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FDC6310P  

  
Dual P-Channel 2.5V Specified PowerTrench MOSFET

FDC6310P April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain lo



Fairchild Semiconductor
Fairchild Semiconductor

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FDC6308P  

  
Dual P-Channel 2.5V Specified PowerTrench MOSFET

FDC6308P July 1999 FDC6308P Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of



Fairchild Semiconductor
Fairchild Semiconductor

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