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March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state res
FDC6330L February 1999 FDC6330L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power MOSFE
FDC6330L February 1999 FDC6330L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power MOSFE
FDC6333C October 2001 FDC6333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching p
FDC6331L August 2001 FDC6331L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET
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