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FDC6304P 전자부품 데이터시트



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FDC6304P  

Fairchild Semiconductor
Fairchild Semiconductor

FDC6304P

Digital FET/ Dual P-Channel

July 1997 FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize




관련 부품 FDC630 상세설명

FDC6308P  

  
Dual P-Channel 2.5V Specified PowerTrench MOSFET

FDC6308P July 1999 FDC6308P Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of



Fairchild Semiconductor
Fairchild Semiconductor

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FDC6305  

  
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

FDC6305N March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and y



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDC6305N  

  
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

FDC6305N March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and y



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDC6303N  

  
Digital FET/ Dual N-Channel

August 1997 FDC6303N Digital FET, Dual N-Channel General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDC6306P  

  
Dual P-Channel 2.5V Specified PowerTrench MOSFET

FDC6306P February 1999 FDC6306P Dual P-Channel 2.5V Specified PowerTrench™ MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintai



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDC6303  

  
Digital FET/ Dual N-Channel

August 1997 FDC6303N Digital FET, Dual N-Channel General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state



Fairchild Semiconductor
Fairchild Semiconductor

PDF




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