|
FDC6308P July 1999 FDC6308P Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of
FDC6305N March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and y
FDC6305N March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and y
August 1997 FDC6303N Digital FET, Dual N-Channel General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state
FDC6306P February 1999 FDC6306P Dual P-Channel 2.5V Specified PowerTrench™ MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintai
August 1997 FDC6303N Digital FET, Dual N-Channel General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |