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FDB8874 November 2004 FDB8874 N-Channel PowerTrench® MOSFET 30V, 121A, 4.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized f
FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET June 2010 FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.6m: Features RDS(ON) = 1.9m: (Typ), VGS = 5V, ID = 80A Qg(5) = 89nC (Typ), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pul
FDB8860 N-Channel Logic Level PowerTrench® MOSFET January 2006 FDB8860 N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.6mΩ Features RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A Qg(5) = 89nC (Typ), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capab
FDP8880 / FDB8880 0 May 2008 FDP8880 / FDB8880 N-Channel PowerTrench® MOSFET tmM 30V, 54A, 11.6mΩ Features rDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A rDS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low General Description This N-Channel MOSFET has been
FDB8870 September 2004 FDB8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m Ω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized
FDB8896 November 2004 FDB8896 N-Channel PowerTrench® MOSFET 30V, 93A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It
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