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Datasheet FDB3672 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | FDB3672 | N-Channel PowerTrench MOSFET SMD Type
MOSFET
N-Channel PowerTrench MOSFET KDB3672 (FDB3672)
Features
rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)
+0.25.28 -0.2
+0.28.7 -0.2
TO-263
+0.2
4.57+0.1 -0.2 1.27-0.1 |
 Kexin |
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| 2 | FDB3672 | N-Channel PowerTrench MOSFET FDB3672
July 2004
FDB3672
N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ
Features
• rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and R |
 Fairchild Semiconductor |
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| 1 | FDB3672_F085 | N-Channel PowerTrench MOSFET FDB3672_F085 N-Channel PowerTrench® MOSFET
FDB3672_F085
N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ
Features
• rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS |
Fairchild Semiconductor |
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