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Datasheet FDB3632 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | FDB3632 | N-Channel PowerTrench MOSFET SMD Type
MOSFET
N-Channel PowerTrench MOSFET KDB3632(FDB3632)
Features
rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)
+0.25.28 -0.2
+0.28.7 -0.2
TO-263
+0.2
4.57+0.1 -0.2 1.27-0 |
Kexin |
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1 | FDB3632 | N-Channel PowerTrench MOSFET 100V/ 80A/ 9m FDB3632 / FDP3632 / FDI3632
April 2003
FDB3632 / FDP3632 / FDI3632
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Features
• r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Rep |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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