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SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3682 (FDB3682) Features rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0
FDB3672_F085 N-Channel PowerTrench® MOSFET FDB3672_F085 N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ Features • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS
FDB3672 July 2004 FDB3672 N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ Features • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and R
SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3672 (FDB3672) Features rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1
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