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FDB2614 전자부품 데이터시트
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FDB2614 전자부품 회로 및
기능 검색 결과
FDB2614
Fairchild Semiconductor
N-Channel PowerTrench MOSFET
FDB2614 200V N-Channel PowerTrench MOSFET
November 2006
FDB2614
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especial
관련 부품 FDB26 상세설명
FDB2670
200V N-Channel PowerTrench MOSFET
Fairchild Semiconductor
PDF
200V N-Channel PowerTrench MOSFET
FDP2670/FDB2670 November 2001 FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance
Fairchild Semiconductor
FDB2670
N-Channel PowerTrench MOSFET
Kexin
PDF
N-Channel PowerTrench MOSFET
SMD Type MOSFET 200V N-Channel PowerTrench MOSFET KDB2670(FDB2670) Features 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.
Kexin
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PartNumber.co.kr | 2020 | 연락처 |