파트넘버.co.kr FDB024N06 데이터시트 검색

FDB024N06 전자부품 데이터시트



FDB024N06 전자부품 회로 및
기능 검색 결과



FDB024N06  

Fairchild Semiconductor
Fairchild Semiconductor

FDB024N06

N-Channel PowerTrench MOSFET

FDB024N06 N-Channel PowerTrench® MOSFET July 2008 FDB024N06 60V, 265A, 2.4mΩ Features N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especial




관련 부품 FDB024N 상세설명

FDB024N08BL7  

  
MOSFET ( Transistor )

FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ Features • RDS(on) = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) *QG • Low Reverse Recovery Charge, Qrr = 112 nC • Soft Reverse Recovery Body Diode • Ena



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FDB024N04AL7  

  
MOSFET ( Transistor )

FDB024N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N04AL7 N-Channel PowerTrench® MOSFET 40 V, 219 A, 2.4 mΩ Features • RDS(on) = 2.0 mΩ (Typ.)@ VGS = 10 V, ID = 80 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • Hig



Fairchild Semiconductor
Fairchild Semiconductor

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처