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SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - MARCH 1999 FEATURES FCX690B C * * * * 2W POWER DISSIPATION 6A Peak Pulse Current Gain of 400 @IC=1Amp Very Low Saturation Voltage Complimentary Type Partmarking Detail - FCX790A 690 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-B
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - NOVEMBER 1998 FEATURES FCX688B C * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage Complimentary Type Partmarking Detail - FCX789A 688 E C B ABSOLUTE MAXIMU
FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE(sat)= 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low on state losses at 120V operation. This mak
FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE(sat)= 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low on state losses at 120V operation. This mak
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - NOVEMBER 1998 FEATURES FCX617 C * * * * * 2W POWER DISSIPATION 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 50mΩ at 3A
SOT89 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 – NOVEMBER 2000 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt * Optimised hfe characterised upto 200mA APPLICATIONS * Telephone dialler circuits * Hook switches for modems * Predrivers within HID lamp balla
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