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SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 OCTOBER 1995 FEATURES * 150 Volt VCEO * 1 Amp continuous current 7 FCX495 C PARTMARKING DETAIL – N95 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Cu
Features BVCEO > 150V IC = 1A high Continuous Current Low saturation voltage VCE(sat) < 300mV @ 0.5A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Application
A Product Line of Diodes Incorporated FCX493 100V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features • BVCEO > 100V • IC = 1A high Continuous Current • Low saturation voltage VCE(sat) < 300mV @ 250mA • Complementary PNP type: FCX593 • Totally Lead-Free & Fully RoHS compliant (No
Features BVCEO > 60V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current RCE(sat) = 195mΩ for a Low Equivalent On-Resistance hFE Characterized up to 2A for High Current Gain Hold-Up Complementary PNP Type: FCX591 Totally Lead-Free & Fully RoHS Compliant (No
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE – PARTMARKING DETAIL – 7 FCX593 N93 FCX493 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Curr
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt COMPLEMENTARY TYPE – PARTMARKING DETAIL – 7 FCX491 C FCX591 N1 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage
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