FCB36N60N
Fairchild Semiconductor
N-Channel MOSFETFCB36N60N N-Channel MOSFET
March 2013
FCB36N60N
N-Channel SupreMOS® MOSFET
600 V, 36 A, 90 mΩ Features
• RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A • Ultra low gate charge (Typ. Qg = 86 nC) • Low effective output capacitance (Typ. Coss.eff = 361