Datasheet FCA47N60F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FCA47N60F	600V N-Channel MOSFET FCA47N60F 600V N-Channel MOSFET, FRFET SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.062Ω • Fast Recovery Type ( trr = 240ns) • Ultra Low Gate Charge (typ. Qg = 210nC) • Low Effective Output Capacitance (typ. Cosseff. = 420pF) • 100% av	Fairchild Semiconductor

FCA47N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FCA47N60F	600V N-Channel MOSFET FCA47N60F 600V N-Channel MOSFET, FRFET SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.062Ω • Fast Recovery Type ( trr = 240ns) • Ultra Low Gate Charge (typ. Qg = 210nC) • Low Effective Output Capacitance (typ. Cosseff.	Fairchild Semiconductor
FCA47N60	N-Channel MOSFET FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET FCA47N60 / FCA47N60_F109 N-Channel SuperFET® MOSFET June 2014 600 V, 47 A, 70 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg= 210 nC) • Low Effective Output Capacita	Fairchild Semiconductor
FCA47N60_F109	N-Channel MOSFET FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET FCA47N60 / FCA47N60_F109 N-Channel SuperFET® MOSFET June 2014 600 V, 47 A, 70 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg= 210 nC) • Low Effective Output Capacita	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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