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FCA20N60F 전자부품 데이터시트



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기능 검색 결과



FCA20N60F  

Fairchild Semiconductor
Fairchild Semiconductor

FCA20N60F

N-CHANNEL FRFET MOSFET

FCA20N60F — N-Channel SuperFET® FRFET® MOSFET FCA20N60F May 2014 N-Channel SuperFET® FRFET® MOSFET 600 V, 20 A, 190 mΩ Features Description • 650 V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Fast Recovery Type (Typ. Trr = 160 ns ) • Ultra




관련 부품 FCA20N6 상세설명

FCA20N60S_F109  

  
N-Channel MOSFET

FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET August 2007 SuperFETTM Features • 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche t



Fairchild Semiconductor
Fairchild Semiconductor

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FCA20N60S  

  
N-Channel MOSFET

FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET August 2007 SuperFETTM Features • 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche t



Fairchild Semiconductor
Fairchild Semiconductor

PDF



FCA20N60  

  
N-Channel MOSFET

FCA20N60 — N-Channel SuperFET® MOSFET August 2014 FCA20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanch



Fairchild Semiconductor
Fairchild Semiconductor

PDF




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