F8N60
Pan Jit International
PJF8N60PJP8N60 / PJF8N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 8A , 600V, R DS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for
F8NK85Z
STF8NK85ZSTP8NK85Z STF8NK85Z
N-channel 850V - 1.1Ω - 6.7A - TO-220 /TO-220FP Zener - protected SuperMESH™ Power MOSFET
General features
Type STP8NK85Z STF8NK85Z
■ ■ ■ ■ ■
VDSS (@Tjmax) 850 V 850 V
RDS(on) < 1.4 Ω < 1.4 Ω
ID 6.7 A 6.7 A
Extremely high dv/dt capability 100% avalange teste
STMicroelectronics
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