F59L1G81MA
Elite Semiconductor
1 Gbit (128M x 8) 3.3V NAND Flash MemoryESMT
Flash
FEATURES
z Voltage Supply: 3.3V (2.7V~3.6V) z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation -
F59L1G81A
1 Gbit (128M x 8) 3.3V NAND Flash MemoryESMT
Flash
FEATURES
z Voltage Supply: 2.6V ~ 3.6V z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read:
Elite Semiconductor
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