Datasheet F59D4G81A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	F59D4G81A	4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page Program: (2K + 64) By	Elite Semiconductor

F59D4G Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
F59D4G161A	4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page P	Elite Semiconductor
F59D4G81A	4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page P	Elite Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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