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Datasheet F2N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | F2N60 | PJF2N60 PJP2N60 / PJF2N60
600V N-Channel Enhancement Mode MOSFET FEATURES
• 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A
TO-220AB / ITO-220AB TO-220AB
• Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, B |
 Pan Jit International |
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| 3 | F2N60 | 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
F2N60
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC F2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Th |
 Unisonic Technologies |
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| 2 | F2N60 | N-CHANNEL POWER MOSFET F2N60
N-沟道功率 MOS 管/N-CHANNEL POWER MOSFET
◆应用:电子镇流器 电子变压器 开关电源
◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply
◆特点:热阻低 开关速度快 输入阻抗高 符合 RoHS 规范
◇Features:Low Thermal Resistance |
 Red Diamond Optoelectronics |
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| 1 | F2N60 | N-CHANNEL POWER MOSFET Shenzhen SI Semiconductors Co., LTD.
N-CHANNEL POWER MOSFET
Product Specification
F2N60
FEATURES LOW THERMAL RESISTANCE REPETITIVE AVALANCHE RATED FAST SWITCHING
APPLICATION: ELECTRONIC BALLAST
ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
Absolute Maximum Ratings Tc=25°C
PARAMETER
SYMBOL |
 SI Semiconductors |
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