|
|
Datasheet F15 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | F15 | Diode Switching 1.5KV 0.35A 2-Pin Case G-66 |
 New Jersey Semiconductor |
 |
| 13 | F1500NC250 | Extra Fast Recovery Diode
WESTCODE
An IXYS Company
Date:- 2 Oct, 2003 Data Sheet Issue:- 1
Provisional Data
Extra Fast Recovery Diode Type F1500NC250
Absolute Maximum Ratings
VRRM VRSM
VOLTAGE RATINGS
Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1)
MAXIMUM LIMITS
25 |
 IXYS |
|
| 12 | F1510 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly |
 Polyfet RF Devices |
|
| 11 | F1516 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly |
Polyfet RF Devices |
|
| Esta página es del resultado de búsqueda del F15. Si pulsa el resultado de búsqueda de F15 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |