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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for great
TX Differential Input RF Amplifier GENERAL DESCRIPTION The F1423 is a 600 MHz to 3000 MHz TX differential input / single-ended output RF amplifier used in transmitter applications. The F1423 TX Amp provides 13.1 dB gain with +41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz. This device uses a sing
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for great
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly
F1400A Series 9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator • Former Product OBSOLETE Pin Connections X O 95
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PartNumber.co.kr | 2020 | 연락처 |