F1400A
MTRONPTI
Clock Oscillator
F1400A Series 9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator
• Former
Product
OBSOLETE
Pin Connections
X O
95
F1401
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORpolyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly
Polyfet RF Devices
PDF
F1404ZS
IRF1404ZSPD - 94634B
IRF1404Z IRF1404ZS IRF1404ZL
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
VDSS = 40V RDS(on) = 3.7mΩ
This HEXFET® Power MOSFET utilizes the late
IRF
PDF