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Datasheet F101 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | F101 | Diode ( Rectifier ) |
American Microsemiconductor |
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10 | F1010EL | IRF1010EL PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
G
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 12mΩ
Description
Advanced |
Power MOSFET |
|
9 | F1010ES | IRF1010ES PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
G
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 12mΩ
Description
Advanced |
Power MOSFET |
|
8 | F1010N | IRF1010N PD - 91278
IRF1010N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 11mΩ
G S
ID = 85A
Description
Advanced HEXFET® Power MOSFETs from Intern |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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