F1001C
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTORpolyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for great
Polyfet RF Devices
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F100164
16 Input MultiplexerPrinted from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partm
National Semiconductor
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