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Datasheet EU1Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | EU1Z | Silicon And Fast Recovery Rectifiers RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified sine-wave
Voltage Current Superimposed
Maximum Forward Voltage
Maximum
DC
Reverse
Current TA=25 OC
Typical Reverse Recovery
Time
Package Style
T |
 WEJ |
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| 4 | EU1Z | High Efficiency Rectifiers EU1Z-EU1C
High Efficiency Rectifiers
VOLTAGE RANGE: 200--- 1000 V CURRENT: 0.25,0.5 A
Features
Low cost Diffused junction Low leakage Low forward voltage drop Easily cleaned with freon, Alcohol, lsopropand and similar solvents
Mechanical Data
Case: JEDEC DO-41, molded plastic Polarity: Color band d |
 LGE |
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| 3 | EU1Z | Fast-Recovery Rectifier Diodes Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR (µA) IR (H) (µA)
Others
Tj (°C)
t rr (µs)
IF /IRP (mA)
t rr (µs)
IF /I |
 Sanken electric |
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| 2 | EU1Z | HIGH EFFICIENCY RECTIFIER BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
FEATURES
EU1Z(Z) - - - EU1C(Z)
VOLTAGE RANGE: 200--- 1000 V CURRENT: 0.25,0.5 A
Low cost Diffused junction Low leakage Low forward voltage drop Easily cleaned with freon, Alcohol, lsopropand and similar solvents
DO - 41
MECHANICA |
 Galaxy Semi-Conductor |
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