Datasheet EPC3126G-X Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	EPC3126G-x	Surface Mount Low Power Push-Pull Transformers Surface Mount Low Power Push-Pull Transformers ELECTRONICS INC. EPC3126G-X • Designed for use with Maxim Max 253/845 • Operating Temperature : -40°C to +85°C • UL1446 Class F Insulating System • UL94-V0 Recognized Materials • Teflon FEP nsulation • Up to 1 Watt E	PCA ELECTRONICS	transformer
2	EPC3126G-x-LF	Surface Mount Low Power Push-Pull Transformers Surface Mount Low Power Push-Pull Transformers ELECTRONICS INC. EPC3126G-X-LF • Designed for use with Maxim Max 253/845 • PFA Teflon Insulation (Triple Insulated Wire) • UL1446 Class H (Class 180) Insulating System • Operating Temperature : -40°C to +85°C • UL94-V0	PCA ELECTRONICS	transformer

EPC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	EPC1	Configuration Devices Configuration Devices for ® SRAM-Based LUT Devices Data Sheet December 2002, ver. 12.2 Features ■ ■ ■ ■ ■ ■ ■ ■ Serial device family for configuring APEXTM II, APEX 20K (including APEX 20K, APEX 20KC, and APEX 20KE), MercuryTM, ACEX® 1K, and FLEX® (FLEX 6000, FLEX 10KE, a	Altera Corporation	data
2	EPC10	EPC Cores 68 Product Specifications (Mn-Zn Ferrite) Type : EPC Cores Ordering Code: P4 EPC19 G Material Core Size Gapped AL Value Shape: Type:1 Type:2 DIMENSIONS CORES EPC10 EPC10A EPC12.6 EPC13 EPC13A EPC13C EPC14.5 EPC17 EPC18 EPC19 EPC19A EPC19B EPC19.5 EPC19.6 EPC19.6/30 EPC20 EPC21.9 EPC25 EPC25	ACME	data
3	EPC1001	Enhancement Mode Power Transistor DATASHEET EPC1001 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 7 mW ID , 25 A EPC1001 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN�	EPC	transistor
4	EPC1005	Enhancement Mode Power Transistor DATASHEET EPC1005 – Enhancement Mode Power Transistor VDSS , 60 V RDS(ON) , 7 mW ID , 25 A EPC1005 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN�	EPC	transistor
5	EPC1007H	Ethernet DC/DC Converter Ethernet DC/DC Converter EPC1007P & EPC1007H Features 75 % Typical efficiency at full load @ nominial input voltage Unregulated Output Input / Output Isolation Input filter to reduce input ripple current Designed for low common mode noise Electrical Specifications PCA P/N EPC10	PCA Electronics	converter
6	EPC1007P	Ethernet DC/DC Converter Ethernet DC/DC Converter EPC1007P & EPC1007H Features 75 % Typical efficiency at full load @ nominial input voltage Unregulated Output Input / Output Isolation Input filter to reduce input ripple current Designed for low common mode noise Electrical Specifications PCA P/N EPC10	PCA Electronics	converter
7	EPC1008H	Ethernet DC/DC Converter Ethernet DC/DC Converter EPC1008P & EPC1008H Features 75 % Typical efficiency at full load @ nominial input voltage Unregulated Output Input / Output Isolation Input filter to reduce input ripple current Designed for low common mode noise Electrical Specifications PCA P/N EPC10	PCA Electronics	converter

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Número de pieza	Descripción	Fabricantes	PDF
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