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EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector pr
EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector pr
EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector pr
EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector pr
EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector pr
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