|
|
Datasheet EMD3FHA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | EMD3FHA | NPN + PNP Complex Digital Transistors EEMMDD33FH/ AU/MUDM3DN3N/FIHMAD/3IMAD3AFRA
NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
AEC-Q101 Qualified
|  ROHM Semiconductor | transistor |
EMD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | EMD02N06E | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
3.1mΩ
ID
191A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless  Excelliance MOS transistor | | |
| 2 | EMD02N60A | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID UIS, 100% Tested
2A
G S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis Excelliance MOS transistor | | |
| 3 | EMD02N60AK | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.0Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwi Excelliance MOS transistor | | |
| 4 | EMD02N60CS | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwi Excelliance MOS transistor | | |
| 5 | EMD02N60CSK | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.0Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwi Excelliance MOS transistor | | |
| 6 | EMD02N60F | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwi Excelliance MOS transistor | | |
| 7 | EMD02N70CS | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
700V
D
RDSON (MAX.)
6Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Excelliance MOS transistor | |
| Esta página es del resultado de búsqueda del EMD3FHA. Si pulsa el resultado de búsqueda de EMD3FHA se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |