|
|
Datasheet EMA6DXV5T1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | EMA6DXV5T1 | Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistor
EMA6DXV5T1, EMA6DXV5T5
Preferred Devices
Dual Common Emitter Bias Resistor Transistor
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network | ON Semiconductor | transistor |
EMA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | EMA04N03A | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
4mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other Excelliance MOS transistor | | |
2 | EMA06N03AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis Excelliance MOS transistor | | |
3 | EMA06N03CS | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other Excelliance MOS transistor | | |
4 | EMA09N03AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
9mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis Excelliance MOS transistor | | |
5 | EMA09N03CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
9mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Other Excelliance MOS transistor | | |
6 | EMA1001 | 1W Mono Audio Power Amplifier ESMT/EMP
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily designed for portable communication applications such as mobile phones and portable multimedia players (PMP). To an 8Ω BTL load, it can deliver 1 watt of continuous average power with less t Elite Semiconductor amplifier | | |
7 | EMA1001-50MA08GRR | 1W Mono Audio Power Amplifier ESMT/EMP
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily designed for portable communication applications such as mobile phones and portable multimedia players (PMP). To an 8Ω BTL load, it can deliver 1 watt of continuous average power with less t Elite Semiconductor amplifier | |
Esta página es del resultado de búsqueda del EMA6DXV5T1. Si pulsa el resultado de búsqueda de EMA6DXV5T1 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |