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EM6K1 Transistor Small switching (30V, 0.1A) EM6K1 !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal
EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low on
1.2V Drive Nch + Nch MOSFET EM6K33 Structure ilicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Dimensions (Unit : mm) SOT-563 Application Switching Packaging specifications Package Taping Ty
EM6K1 Transistor Small switching (30V, 0.1A) EM6K1 !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal
EM6K1 Transistor Small switching (30V, 0.1A) EM6K1 !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal
1.2V Drive Nch+Nch MOSFET EM6K7 zStructure Silicon N-channel MOSFET zApplications Switching zDimensions (Unit : mm) EMT6 zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V)
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