EM567168
Etron Technology
2M x 16 Pseudo SRAMEtronTech
Features
• Organized as 2M words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA • Deep power-down Current : 10uA (Memory cell data invalid) • Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) • Compatible with low powe
EM567169BC
2M x 16 Pseudo SRAMEtronTech
Features
• Organized as 2M words by 16 bits • Fast Cycle Time : 60/65/70/85ns • Fast Page Cycle Time : 18/20/25/30ns • Page Read Operation by 8 words • Standby Current(ISB1): 100uA • Deep power-down Current : 10uA (Memory cell data invalid) • Byte data control: LB# (DQ0 - 7),
Etron Technology
PDF