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EM488M3244VBA  

Eorex
Eorex

EM488M3244VBA

Synchronous DRAM

eorex Features EM488M3244VBA 256Mb (2M×4Bank×32) Synchronous DRAM Description The EM488M3244VBA is Synchronous Dynamic Random Access Memory (SDRAM) organized as 2Meg words x 4 banks by 32 bits. All inputs and outputs are synchronized wi




관련 부품 EM488M3244V 상세설명

EM488M3244VBD  

  
256Mb Synchronous DRAM

eorex Revision History Revision 0.1 (Dec. 2013) - First release EM488M3244VBD Dec. 2013 www.eorex.com 1/18 eorex EM488M3244VBD 256Mb (2M4Bank32) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.3V 0.3V Power Supply • LVTTL Compatible with Multiple



Eorex
Eorex

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EM488M3244VBB  

  
256Mb Synchronous DRAM

eorex EM488M3244VBB 256Mb (2M×4Bank×32) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Latency (C/L) - 2 o



Eorex
Eorex

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EM488M3244VTB  

  
256Mb Synchronous DRAM

eorex EM488M3244VTB 256Mb (2M×4Bank×32) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Latency (C/L) - 2 o



Eorex
Eorex

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EM488M3244VBC  

  
256Mb Synchronous DRAM

eorex Preliminary EM488M3244VBC 256Mb (2M×4Bank×32) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 2.7V ~ 3.6V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Laten



Eorex
Eorex

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