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ECH8315 Power MOSFET –30V, 25mΩ, –7.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features Low On-Resista
Ordering number : ENA1430B ECH8310 P-Channel Power MOSFET –30V, –9A, 17mΩ, Single ECH8 http://onsemi.com Features • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source
Ordering number : ENA1182A ECH8308 P-Channel Power MOSFET –12V, –10A, 12.5mΩ, Single ECH8 http://onsemi.com Features • Best suited for load switching • 1.8V drive • Protection diode in • Low ON-resistance • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=2
Ordering number : ENA0302 ECH8306 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8306 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Vol
www.partnumber.co.kr Ordering number : ENA1418A ECH8309 SANYO Semiconductors DATA SHEET ECH8309 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to
www.partnumber.co.kr Ordering number : ENA1182 ECH8308 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8308 Features • • • • General-Purpose Switching Device Applications Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications
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