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Datasheet E301 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | E301 | Diode, Rectifier | American Microsemiconductor | diode |
E30 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | E30 | Miniature LEDs A
Miniature LEDs (2.0mm Diameter)
Line No. Part No. E3 E5 Lens Translucent Translucent Luminous Intensity at 20mA Minimum Typical 0.5mcd 0.5mcd 3.0mcd 3.0mcd Viewing Angle 2θ ½ 45° 45° Forward Voltage at 20mA Typical Maximum 2.1V 2.1V 2.7V 2.7V Peak Wave Length at 20mA 700nm 560nm Drawing A A
Gilway Technical Lamp led | | |
2 | E301 | Diode, Rectifier American Microsemiconductor diode | | |
3 | E304-12V | T-1 and T-1 3/4/ Infrared LEDs A
B
2 7 MI N
1.5 2.54
.5 1 MAX
CATHODE
8.6 1
5
5.9
T-1 and T-1¾, Infrared LEDs: 880nm, 940nm
Line Part No. No. Size T-1 T-1 T-1¾ T-1¾ Lens Clear Trans.Blue Clear Trans.Blue Radiant Power at 20mA Minimum Typical 2.0mW/sr 2.0mW/sr 8.0mW/sr 5.0mW/sr 10.0mW/sr 4.0mW/sr 20.0mW/sr 20.0mW/sr Vewing Gilway Technical Lamp led | | |
4 | E304-5V | T-1 and T-1 3/4/ Infrared LEDs A
B
2 7 MI N
1.5 2.54
.5 1 MAX
CATHODE
8.6 1
5
5.9
T-1 and T-1¾, Infrared LEDs: 880nm, 940nm
Line Part No. No. Size T-1 T-1 T-1¾ T-1¾ Lens Clear Trans.Blue Clear Trans.Blue Radiant Power at 20mA Minimum Typical 2.0mW/sr 2.0mW/sr 8.0mW/sr 5.0mW/sr 10.0mW/sr 4.0mW/sr 20.0mW/sr 20.0mW/sr Vewing Gilway Technical Lamp led | | |
5 | E3055T | MJE3055T
MJE3055T/MJE2955T
GENERAL DESCRIPTION
Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose
SILICON EPITAXIAL PLANAR TRANSISTOR
QUICK REFERENCE DATA
SYMBOL
TO-220
CONDITIONS VBE = 0V MIN MAX 70 60 10 75 1.2 2.0 UNIT V V A ETC data | | |
6 | E30A23VPR | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
E30A23VPS, E30A23VPR
STACK SILICON DIFFUSED DIODE
F2
D
FEATURES
Average Forward Current : IO=30A. Zener Voltage : 23V(Typ.)
F1 E
POLARITY
E30A23VPS (+ Type) E30A23VPR
G
(- Type)
A
MAXIMUM RATING (Ta=25
CHARACTERISTIC Av KEC(Korea Electronics) diode | | |
7 | E30A23VPR | STACK SILICON DIFFUSED DIODE SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
E30A23VPS, E30A23VPR
STACK SILICON DIFFUSED DIODE
D F2
FEATURES Average Forward Current : IO=30A. Zener Voltage : 23V(Typ.)
POLARITY E30A23VPS
(+ Type)
E30A23VPR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
A KEC diode | |
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Número de pieza | Descripción | Fabricantes | |
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