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Datasheet DXT5551 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | DXT5551 | NPN TRANSISTOR Features
BVCEO > 160V IC = 600mA High Collector Current Complementary PNP Type: DXT5401 Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified t |
 Diodes |
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| 2 | DXT5551 | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DC COMPONENTS CO., LTD.
R
DXT5551
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications requiring high breakdown voltages.
SOT-89
.066(1.70) .059(1.50) .063(1.60) .055(1.40)
Pinning
1 = Bas |
 Dc Components |
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| 1 | DXT5551P5 | NPN HIGH VOLTAGE POWER TRANSISTOR ADVANCE INFORMATION
Features and Benefits
• 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 2.25W • BVCEO > 160V • IC(cont) = 0.6A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free, “Green” Device (Note 2) • Qualified to A |
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