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DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns Lithium energy source is electr
09/13/2004 RELIABILITY REPORT FOR DS1249W Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected] ph: 972-371-3726 fax: 972
DS1249W 3.3V 2048kb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 100ns Lith
DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns Lithium energy source is electr
DS1248/DS1248P 1024k NV SRAM with Phantom Clock www.maxim-ic.com FEATURES § § § § § § § § § § § § Real-time clock (RTC) keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years 128k x 8 NV SRAM directly replaces volatile static RAM or EEPROM Embed
DS1245W 3.3V 1024k Nonvolatile SRAM www.dalsemi.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access t
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