DMT3006LFG
Diodes
N-CHANNEL ENHANCEMENT MODE MOSFETProduct Summary
V(BR)DSS 30V
RDS(ON) Max 6mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V
ID Max TC = +25°C
55.6A
DMT3006LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI
Features and Benefits
Low RDS(ON) – Ensures On-State Losses are Minimized Excellent
DMT3006LPS
N-CHANNEL ENHANCEMENT MODE MOSFETADVANCE INNEFWORPRMOADTIUOCNT
Product Summary
V(BR)DSS 30V
RDS(ON) max 6mΩ @ VGS = 10V 9.8mΩ @ VGS = 4.5V
ID max TC = +25°C
65A
55A
DMT3006LPS
Green
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
Features and Benefits
Low RDS(ON) – Minimizes On-State Losses Excellent Qgd x RDS(ON) Pro
Diodes
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DMT3006LFDF
N-CHANNEL ENHANCEMENT MODE MOSFETADVANCED INFORMATION
DMT3006LFDF
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max
7mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V 15mΩ @ VGS = 3.7V
ID Max TA = +25°C
14.1A 11.8A 9.6A
Features
0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 �
Diodes
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DMT3006LDK
N-CHANNEL ENHANCEMENT MODE MOSFETADAVDAAVDNAVCNAECNDECIDENI IFNNNOFEFROWORMRPAMRMTAIOATOIDTINOUONCNT
DMT3006LDK
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
VDSS 30V
RDS(ON) max
6.5mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V
ID max TC = +25°C
46.2 A
37.0 A
Description
This MOSFET is designed to minimize the on-state resistance
Diodes
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