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A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H015LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) Max 16mΩ @ VGS = 10V 18mΩ @ VGS = 6.0V ID TA = +25°C 8.3A 7.9A Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production �
Green DMT10H015LK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 15mΩ @ VGS = 10V 18mΩ @ VGS = 6V ID TC = +25°C 52.7A 48A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power manageme
NEW PRODUCT Green DMT10H015LFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) max 13.5mΩ @ VGS = 10V 18mΩ @ VGS = 6.0V ID TC = +25°C 42A 36A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain su
DMT10H015LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 15mΩ @ VGS = 10V 19.5mΩ @ VGS = 6V ID TC = +25°C 34A 32A Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior s
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